STD361

NPN Silicon Transistor

Description •Extremelylowcollector-to-emittersaturationvoltage (VCE(SAT)=0.2VTyp.@IC/IB=3A/150㎃) •Suitableforlowvoltagelargecurrentdrivers •SwitchingApplication

STD361

NPN Silicon Transistor

Description •Extremelylowcollector-to-emitter saturationvoltage (VCE(SAT)=0.2VTyp.@IC/IB=3A/150㎃) •Suitableforlowvoltagelargecurrent drivers •SwitchingApplication

STD361

NPN Silicon Transistor

TF361M

TO-2203AThyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=3A ●Gatetriggercurrent:IGT=10mAmax

TF361M-A

TO-2203AHighsensitiveThyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=3A ●HighsensitiveGatetriggerCurrent:IGT=0.1mAmax

TF361S

TO-220F3AThyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=3A ●Gatetriggercurrent:IGT=15mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS)

TLP361J

TriacDriverProgrammableControllersAC-OutputModuleSolidStateRelay

TLP361J

GaAsIred&Photo-Triac

TLP361JF

GaAsIred&Photo-Triac

TM361M-L

TO-2203ATriac