NPN Silicon Transistor

Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150 ㎃ ) • Suitable for low voltage large current drivers • Switching Application

文件：258.75 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150 ㎃ ) • Suitable for low voltage large current drivers • Switching Application

文件：294.72 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

文件：294.72 Kbytes 页数：4 Pages

KODENSHI

可天士

TO-220 3A Thyristor

■ Features ● Repetitive peak off-state voltage: VDRM=200, 400, 600V ● Average on-state current: IT(AV)=3A ● Gate trigger current: IGT=10mA max

文件：48.61 Kbytes 页数：2 Pages

Sanken

三垦

TO-220 3A High sensitive Thyristor

■Features ●Repetitive peak off-state voltage: VDRM=200, 400, 600V ●Average on-state current: IT(AV)=3A ●High sensitive Gate trigger Current: IGT=0.1mA max

文件：45.9 Kbytes 页数：2 Pages

Sanken

三垦

TO-220F 3A Thyristor

■ Features ● Repetitive peak off-state voltage: VDRM=200, 400, 600V ● Average on-state current: IT(AV)=3A ● Gate trigger current: IGT=15mA max ● Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)

文件：30.42 Kbytes 页数：1 Pages

Sanken

三垦