N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：389.99 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET

文件：604.55 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：311.18 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道900 V、5 Ohm典型值、2.1 A SuperMESH功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体