N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

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STMICROELECTRONICS

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N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：333.86 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件：341.77 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：333.86 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：444.44 Kbytes 页数：10 Pages

STMICROELECTRONICS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：334.43 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D12NF06L；Package：DPAK；N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 页数：19 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 页数：16 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

文件：848.89 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体