N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

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ISC

无锡固电

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

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STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：D12NF06L；Package：DPAK；N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

文件：555.56 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：963.88 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.33365 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：674.95 Kbytes 页数：5 Pages

DOINGTER

杜因特