N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

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文件：1.00669 Mbytes 页数：8 Pages

VBSEMI

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件：323.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道60 V、0.08 Ohm典型值、12 A STripFET II功率MOSFET，IPAK封装

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and comp • Exceptional dv/dt capability \n• Low gate charge;

ST

意法半导体

Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体