N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

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STMICROELECTRONICS

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N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件：341.77 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) MOSFET

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VBSEMI

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N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件：341.77 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

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N沟道60V - 0.08Ohm - 12A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"single feature size\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu • Exceptional dv/dt capability \n• Low gate charge;

ST

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