Epitaxial planar NPN silicon transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1mA

文件：213.06 Kbytes 页数：3 Pages

AUK

Epitaxial planar NPN silicon transistor

Kodenshi-AUK

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：70.13 Kbytes 页数：3 Pages

AUK

TRANSISTOR(NPN)

FEATURES ● Low saturation medium current application ● Extremely low collector saturation voltage ● Suitable for low voltage large current drivers ● High DC current gain and large current capability ● Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：944.74 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：252.33 Kbytes 页数：4 Pages

KODENSHI

可天士