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STD10P10F6中文资料意法半导体数据手册PDF规格书
STD10P10F6规格书详情
Features
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6
technology, with a new trench gate structure. The resulting Power MOSFET exhibits
very low RDS(on) in all packages.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
1610 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
23+ |
NA |
10658 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
ST |
15+ |
TO252 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
8860 |
原装正品，支持实单 |
询价 | ||
ST |
20+ |
TO-252 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
20+ |
TO-252 |
50000 |
询价 | |||
ST MICROELECTRONICS |
22+ |
NA |
835 |
原装正品支持实单 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 |
