P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · Bridge circuits · Power Stitching

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ISC

无锡固电

丝印：10P10F6；Package：DPAK；P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The

文件：403.87 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

P沟道100 V、0.136 Ohm典型值、10 A STripFET F6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package

Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The

文件：403.87 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体