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STD10P10F6_V01中文资料意法半导体数据手册PDF规格书
STD10P10F6_V01规格书详情
特性 Features
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
描述 Description
This device is a P-channel Power MOSFET developed using the STripFET F6
technology, with a new trench gate structure. The resulting Power MOSFET exhibits
very low RDS(on) in all packages.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST专家 |
23+ |
DPAK |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
STMicroelectronics |
21+ |
DPAK |
5000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法 |
22+ |
DPAK |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST |
24+ |
TO-252 |
30000 |
公司新到进口原装现货假一赔十 |
询价 | ||
ST专家 |
25+23+ |
DPAK |
29792 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
21+ |
TO-252-3 |
12820 |
只做原装,质量保证 |
询价 | ||
ST |
23+ |
TO-252 |
20000 |
原装正品,假一罚十 |
询价 | ||
ST/意法 |
22+ |
TO252 |
18000 |
原装正品 |
询价 | ||
ST |
1701+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ST |
23+ |
DPAK |
6820 |
原装正品，支持实单 |
询价 |
