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STD10NM50N中文资料意法半导体数据手册PDF规格书
STD10NM50N规格书详情
描述 Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
特性 Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
产品属性
- 型号:
STD10NM50N
- 功能描述:
MOSFET N-CH 500 V Pwr 7A Mdmesh II
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST |
2016+ |
TO-252 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST/意法 |
22+ |
TO220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
ST/意法 |
21+ |
TO-252 |
5000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST |
25+23+ |
TO220 |
20982 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ST/意法 |
2406+ |
71260 |
诚信经营!进口原装!量大价优! |
询价 | |||
ST/意法 |
23+ |
TO-252 |
5000 |
原装正品实单必成 |
询价 |