N-CHANNEL 20V - 0.0026 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：609.26 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 20V - 0.0026 ohm - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

ST

意法半导体

N-CHANNEL 20V - 0.0026 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：609.26 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 20V - 0.0026 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：609.26 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体