丝印：STAC4932；Package：STAC780-4B；HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：STAC4932；Package：STAC780-4B；HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

Features • Improved ruggedness V(BR)DSS > 200 V • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz • POUT = 450 W typ. with 24 dB gain at 123 MHz • In compliance with the 2002/95/EC European directive • Moisture resistant package specifically designed to operate in extreme environments

文件：474.97 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

文件：508.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

文件：330.96 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体