丝印：STP2；Package：SOT-26；P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

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STMICROELECTRONICS

意法半导体

丝印：200N3LL；Package：TO-220；N-channel 30 V, 2.15 m(ohm) typ., 120 A Power MOSFET in a TO-220 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

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STMICROELECTRONICS

意法半导体

丝印：P20NK50Z；Package：TO-220；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：133.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：P20NK50Z；Package：TO-220；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：P20NM60；Package：TO-220；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：P20NM60FP；Package：TO-220FP；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：20NM65N；Package：TO-220；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET ass

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STMICROELECTRONICS

意法半导体

丝印：21N65M5；Package：TO-220；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：P20NK50Z；Package：TO-220；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.89 Kbytes 页数：2 Pages

ISC

无锡固电