丝印：STPS20150CG；Package：D2PAK；High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：STPS20150CG；Package：D2PAK；High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：STPS20150CG；Package：D2PAK；High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：STPS20150CG；Package：D2PAK；High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa

文件：109.48 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

文件：273.79 Kbytes 页数：2 Pages

ISC

无锡固电