STAC4932B_V01中文资料意法半导体数据手册PDF规格书

特性 Features

• Excellent thermal stability

• Common source push-pull configuration

• POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz

• Pulse conditions: 1ms, 10

• In compliance with the 2002/95/EC European directive

• ST air-cavity STAC package technology

描述 Description

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended

for 100 V pulse applications up to 250 MHz. This device is suitable for use in

industrial, scientific and medical applications. The STAC4932B benefits from the

latest generation of efficient, patent-pending STAC package technology.