STAC2932BW分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

STAC2932BW属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的STAC2932BW晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.

The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™

特性 Features

■ Gold metallization

■ Excellent thermal stability

■ Common source push-pull configuration

■ POUT = 300 W min. with 20 dB gain @ 175 MHz

■ In compliance with the 2002/95/EC European directive

■ ST air cavity packaging technology - STAC™ package