Excellent thermal stability

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STMICROELECTRONICS

意法半导体

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

Features • Improved ruggedness V(BR)DSS > 200 V • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz • POUT = 450 W typ. with 24 dB gain at 123 MHz • In compliance with the 2002/95/EC European directive • Moisture resistant package specifically designed to operate in extreme environments

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STMICROELECTRONICS

意法半导体

1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.\n The STAC4932B benefits from the latest generation of efficient, patent-pending pack • Excellent thermal stability\n• Common source push-pull configuration\n• POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz• Pulse conditions: 1 msec - 10%\n• In compliance with the 2002/95/EC European directive\n• ST air cavity packaging technology - STAC®package;

ST

意法半导体

Package：STAC244F；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF PWR N-CH STAC244F

STMICROELECTRONICS

意法半导体

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.\n The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe • Improved ruggedness V(BR)DSS > 200 V\n• Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz\n• POUT = 450 W typ. with 24 dB gain at 123 MHz\n• In compliance with the 2002/95/EC European directive\n• Moisture resistant package specifically designed to operate in extreme environments\n• Drying re;

ST

意法半导体