丝印：STAC4932；Package：STAC780-4B；HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Excellent thermal stability

文件：508.8 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® pack • Excellent thermal stability\n• Common source push-pull configuration\n• POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz• Pulse conditions: 1 msec - 10%\n• In compliance with the 2002/95/EC European directive\n• ST air-cavity STAC® packaging technology;

ST

意法半导体

Package：STAC244B；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANSISTOR RF MOSF N-CH STAC244B

STMICROELECTRONICS

意法半导体