STAC4932B数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.

特性 Features

• Excellent thermal stability
• Common source push-pull configuration
• POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
• Pulse conditions: 1 msec - 10%
• In compliance with the 2002/95/EC European directive
• ST air-cavity STAC® packaging technology

简介

STAC4932B属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的STAC4932B晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。