STAC2932B中文资料300W - 50V HF/VHF DMOS in STAC244 Boltdown package数据手册ST规格书

描述 Description

The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.
The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™

特性 Features

• Gold metallization
• Excellent thermal stability
• Common source push-pull configuration
• POUT= 300 W min. with 20 dB gain @ 175 MHz
• In compliance with the 2002/95/EC European directive
• ST air cavity packaging technology - STAC™package

简介

STAC2932B属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的STAC2932B晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。