STAC150V2-350E中文资料500W - 150V Class E HF/VHF DMOS TRANSISTOR数据手册ST规格书

描述 Description

The STAC150V2-350E is a high voltage N-channel MOS field-effect RF power transistor especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and solar cells manufacturing equipments. STAC150V2-350E benefits from the latest generation of STAC®air cavity package which exhibits a 25% lower thermal resistance compared to equivalent ceramic package.

特性 Features

• Operating frequencies up to 40.68 MHz
• Excellent thermal stability
• POUT= 350 W with 17 dB gain @ 40.68 MHz/150 V
• Designed for class E operation
• V(BR)DSS > 700 V
• STAC air cavity packaging technology - STAC®package
• In compliance with the 2002/95/EC1 European directive

简介

STAC150V2-350E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的STAC150V2-350E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。