丝印：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：64.03 Kbytes 页数：3 Pages

AUK

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Medium Current Application ● Extremely Low Collector Saturation Voltage ● Suitable for Low Voltage Large Current Drivers ● High DC Current Gain and Large Current Capability

文件：476.68 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：180.28 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：189.67 Kbytes 页数：3 Pages

AUK

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

文件：158.04 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1

文件：225.61 Kbytes 页数：4 Pages

AUK