NPN Silicon Transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1

文件：225.61 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Description\n• High current application • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA\n• Suitable for low voltage large current drivers\n• High DC current gain and large current capability\n• Low on resistance : RON=0.6Ω(Max.) @ IB=1mA ;

ALD

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

DOCSIS 3.0 and video front-end for gateway set-top box and cable modem

Features ■ Dual CPU architecture - one for DOCSIS® and one for host including eRouting and VoIP management ■ ARM Cortex-A9 770 MHz, dual-core CPU with NEON™ SIMD co-processor ■ DOCSIS 3.0 data cable modem: – Up to 16 downstream channels (up to 800 Mbit/s) – Up to 4 upstream channels ■ Up

文件：162.57 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Low spread of dynamic parameters

文件：631.54 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体