NPN Silicon Transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1

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AUK

NPN Silicon Transistor

Description\n• High current application • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA\n• Suitable for low voltage large current drivers\n• High DC current gain and large current capability\n• Low on resistance : RON=0.6Ω(Max.) @ IB=1mA ;

ALD

HIGH STABILITY MOTOR CONTROL. DIGITAL TACHOMETER.

文件：120.17 Kbytes 页数：2 Pages

TOSHIBA

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MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

文件：90 Kbytes 页数：5 Pages

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DESCRIPTION Fused-in-glass metallurgically bonded 3 watt zener diodes. FEATURES • 10 Times Greater Surge Rating than Conventional 1Watt Types • Small Phsical Size

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MICROSEMI

美高森美