NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. ​​​​​​​ The transistor is subdivided into one group according to its DC current gain.

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SEMTECH_ELEC

先之科半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

文件：224.88 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：13003；Package：SOT-32；High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

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STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

ST

意法半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A SOT32

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

文件：224.88 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

文件：246.24 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：105.81 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：13003DN；Package：SOT-32；High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：168.79 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体