Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ Integrated antiparallel collector-emitter diode

Applications

■ Electronic ballast for fluorescent lighting

ST13003D-K属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。意法半导体（ST）集团制造生产的ST13003D-K晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。