High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

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STMICROELECTRONICS

意法半导体

丝印：13003；Package：SOT-32；High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

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STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

文件：274.73 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High vol

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STMICROELECTRONICS

意法半导体

NPN Silicon Power Transistors

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. ​​​​​​​ They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection

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SEMTECH_ELEC

先之科半导体

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

ST

意法半导体

Package：TO-225AA，TO-126-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1A SOT32-3

STMICROELECTRONICS

意法半导体

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A SOT32-3

STMICROELECTRONICS

意法半导体