首页 >SSU02N60S5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS-喜可士 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
S |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
S |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
SECOS |
2022+ |
TO-263 |
79999 |
询价 | |||
SECOS |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
MITSUMI |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MITSUMI |
SMD |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
MITSUMI |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 |
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