Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

文件：251.9 Kbytes 页数：10 Pages

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丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：246.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.90721 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

文件：888.41 Kbytes 页数：11 Pages

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500V-900V CoolMOS™ N-Channel Power MOSFET

• Innovative high voltage technology\n• Worldwide best R DS(on) in TO-251 and TO-252\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n\n优势:;

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Cool MOS Power Transistor

文件：888.41 Kbytes 页数：11 Pages

INFINEON

英飞凌