丝印：S7；Package：ES6；MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching • Analog Switches Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V, ID = 10 mA) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V, ID = 20 mA) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V, ID = 50 mA) RDS(ON) = 2

文件：397.78 Kbytes 页数：8 Pages

TOSHIBA

东芝

Small-signal MOSFET 2 in 1

Application Scope：High-Speed Switching / Analog Switches\n\nPolarity：N-ch×2\n\nGeneration：U-MOSⅢ\n\nInternal Connection：Independent\n\nComponent Product (Q1)：SSM6N37CTD\n\nComponent Product (Q2)：SSM6N37CTD\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

东芝

MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching • Analog Switches Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V, ID = 10 mA) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V, ID = 20 mA) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V, ID = 50 mA) RDS(ON) = 2

文件：400.63 Kbytes 页数：8 Pages

TOSHIBA

东芝

TO-220

SUPER超致

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SOP

DDC

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