丝印：S6；Package：ES6；MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS

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TOSHIBA

东芝

Small-signal MOSFET 2 in 1

Application Scope：Power Management Switches\n\nPolarity：P-ch×2\n\nGeneration：U-MOSⅥ\n\nInternal Connection：Independent\n\nRoHS Compatible Product(s) (#)：Please contact us.\n\n • 1.2-V drive\n• : RDS(ON)= 390 m (max)(@VGS = -4.5 V, ID = -800 mA)RDS(ON)= 480 m (max)(@VGS = -2.5 V, ID = -500 mA)RDS(ON)= 660 m (max)(@VGS = -1.8 V, ID = -200 mA)RDS(ON)= 900 m (max)(@VGS = -1.5 V, ID = -100 mA)RDS(ON)= 4000 m (max)(@VGS = -1.2 V, ID = -10 mA)\n• P-ch 2-in-1;

Toshiba

东芝

TO-220

SUPER超致

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SOP

DDC

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TO-220

仙童

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