N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement

文件：429.86 Kbytes 页数：6 Pages

SSC

Silicon Standard Corp.

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：407.91 Kbytes 页数：6 Pages

ETC1List of Unclassifed Manufacturers

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：900.03 Kbytes 页数：8 Pages

Samhop

三合微科

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：900.03 Kbytes 页数：8 Pages

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.01575 Mbytes 页数：8 Pages

VBSEMI

微碧半导体