DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications

文件：267.34 Kbytes 页数：6 Pages

SSC

Silicon Standard Corp.

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

SiliconStandard

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications

文件：267.34 Kbytes 页数：6 Pages

SSC

Silicon Standard Corp.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Optimal DC/DC

文件：266.58 Kbytes 页数：6 Pages

SSC

Silicon Standard Corp.

Video Display Processors

FEATURES @ Single-chip solution for interfacing color TVs (excluding Random-Access Memory (RAM) and Radio Frequency (RF) modulator (TMS9918A only) ® 256 x 192 resolution on TV screen ® 15 unique colors plus transparent @ General 8-bit bidirectional interface to Central Processor Unit

文件：5.77798 Mbytes 页数：104 Pages

TI

德州仪器