丝印：PP2；Power Management Switch Applications

○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)

文件：208.25 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch×2\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nComponent Product (Q1)：SSM6P40TU\nComponent Product (Q2)：SSM6P40TU\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID -1.4 A \nDrain-Source voltage (Q1) VDSS -30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID -1.4 A \nDrain-Source voltage (Q2) VDSS -30 V \nGate-Source voltage (Q2) VGSS +/-20 V \nPower Dissipation PD 0.5 W ;

Toshiba

东芝

Fast Recovery Diode

FEATURES · Fully Mold Isolation · Ultra-Fast Recovery · Low Forward Voltage Drop · High Surge Capability APPLICATIONS · Switching power supply · Power switching circuits

文件：301.52 Kbytes 页数：2 Pages

ISC

无锡固电