SSM6P35AFE

Marking：E4；Package：ES6；Analog Switches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@

SSM6P35AFE

Marking：E4；Package：ES6；MOSFETs Silicon P-Channel MOS

1.Applications •AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

SSM6P35AFE_V01

MOSFETs Silicon P-Channel MOS

1.Applications •AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

SSM6P35AFU

MOSFETsSiliconP-ChannelMOS

1.Applications •AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

SSM6P35AFU

AnalogSwitches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@

SSM6P35FE

High-SpeedSwitchingApplicationsAnalogSwitchApplications

SSM6P35FU

High-SpeedSwitchingApplications

○High-SpeedSwitchingApplications ○AnalogSwitchApplications •1.2-Vdrive •LowON-resistance:Ron=44Ω(max)(@VGS=-1.2V) :Ron=22Ω(max)(@VGS=-1.5V) :Ron=11Ω(max)(@VGS=-2.5V)