丝印：E4；Package：ES6；Analog Switches

Features (1) 1.2 V drive (2) ESD(HBM) level 2 kV (3) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@

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丝印：E4；Package：ES6；MOSFETs Silicon P-Channel MOS

1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -

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MOSFETs Silicon P-Channel MOS

1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -

文件：217.33 Kbytes 页数：8 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch×2\nGeneration：U-MOSⅦ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3J35AMFV\nComponent Product (Q2)：SSM3J35AMFV\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current (Q1) ID -0.25 A \nDrain-Source voltage (Q1) VDSS -20 V \nGate-Source voltage (Q1) VGSS +/-10 V \nDrain current (Q2) ID -0.25 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS +/-10 V \nPower Dissipation PD 0.25 W ;

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