Small Low ON resistance MOSFETs

Polarity：P-ch×2\nInternal Connection：Independent\nComponent Product (Q1)：SSM3J35MFV\nComponent Product (Q2)：SSM3J35MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID -0.1 A \nDrain-Source voltage (Q1) VDSS -20 V \nGate-Source voltage (Q1) VGSS ±10 V \nDrain current (Q2) ID -0.1 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS ±10 V \nPower Dissipation PD 0.15 W ;

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High-Speed Switching Applications Analog Switch Applications

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High-Speed Switching Applications

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V)

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MOSFETs Silicon P-Channel MOS

1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -

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Analog Switches

Features (1) 1.2 V drive (2) ESD(HBM) level 2 kV (3) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@

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MOSFETs Silicon P-Channel MOS

1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -

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