Power Management Switch Applications

Power Management Switch Applications High-Speed Switching Applications • 1.8-V drive • N–ch , P–ch 2–in–1 • Low ON–resistance: Nch RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V) • RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V) • : Pch RD

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

文件：240.37 Kbytes 页数：8 Pages

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TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

文件：240.37 Kbytes 页数：8 Pages

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Small-signal MOSFET 2 in 1

Polarity：N-ch + P-ch\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nComponent Product (Q2)：SSM3J108TU\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 0.8 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS +/-12 V \nDrain current (Q2) ID -0.8 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS +/-8 V ;

Toshiba

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