High-Speed Switching Applications Analog Switch Applications

文件：186.52 Kbytes 页数：5 Pages

TOSHIBA

东芝

Dual N-Channel 60 V (D-S) MOSFET

文件：945.67 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

Small-signal MOSFET 2 in 1

Polarity：N-ch×2\nGeneration：U-MOSⅣ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K7002BFU\nComponent Product (Q2)：SSM3K7002BFU\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current (Q1) ID 0.2 A \nDrain-Source voltage (Q1) VDSS 60 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID 0.2 A \nDrain-Source voltage (Q2) VDSS 60 V \nGate-Source voltage (Q2) VGSS +/-20 V ;

Toshiba

东芝

High-Speed Switching

文件：215.86 Kbytes 页数：8 Pages

TOSHIBA

东芝

High Speed Switching Applications

文件：168.13 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Speed Switching Applications Analog Switch Applications

文件：158.18 Kbytes 页数：5 Pages

TOSHIBA

东芝