Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • Low ON-resistance: Ron = 72.3mΩ (max) (@VGS = -1.5 V) Ron = 46.2mΩ (max) (@VGS = -1.8 V) Ron = 30.2mΩ (max) (@VGS = -2.5 V)

文件：228.39 Kbytes 页数：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

文件：268.2 Kbytes 页数：6 Pages

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Small-signal MOSFET

Polarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -9.5 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V ;

Toshiba

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