Fiwld Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (m

文件：203.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch×2\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K36MFV\nComponent Product (Q2)：SSM3K36MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 0.5 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS +/-10 V \nDrain current (Q2) ID 0.5 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS +/-10 V \nPower Dissipation PD 0.15 W ;

Toshiba

东芝

High-Speed Switching Applications

文件：223.76 Kbytes 页数：5 Pages

TOSHIBA

东芝

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

文件：182.31 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package - typical height of 0.88 mm • Leadless DFN package with side-wettable flanks suitable for customer AOI (Automatic Optical Inspection) • Ideal for automated placement • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 18

文件：182.31 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司