Small Low ON resistance MOSFETs

Polarity：N-ch + P-ch\nGeneration：π-MOSⅥ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K16FS\nComponent Product (Q2)：SSM3J16FS\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 0.1 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS +/-10 V \nDrain current (Q2) ID -0.1 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS +/-10 V ;

Toshiba

东芝

High Speed Switching Applications

文件：198.21 Kbytes 页数：9 Pages

TOSHIBA

东芝

Surface Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Unidirectional only • Excell

文件：130.38 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Transient Voltage Suppression Diodes

文件：1.3967 Mbytes 页数：6 Pages

Littelfuse

力特