Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

High Speed Switching Applications ​​​​​​​ • 2.5V drive • Low on-resistance: Ron = 480mΩ (max) (@VGS = −4 V) Ron = 680mΩ (max) (@VGS = −2.5 V)

文件：476.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

Toshiba

东芝

UFM-3

TOSHIBA

东芝

上传：深圳市金嘉锐电子有限公司

TOSHIBA

东芝

上传：深圳市三芯电子有限公司