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MDP16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDQ16N50G

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTH

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTP

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MSF16N50

500VN-ChannelMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MSW16N50

500VN-ChannelMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MTV16N50E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTV16N50E

TMOSPOWERFET16AMPERES500VOLTSRDS(on)=0.40OHM

TMOSE−FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETis

MotorolaMotorola, Inc

摩托罗拉

PSM16N50CT

16A500VSingleN?륝hannelPowerMOSFET

PFCPFC Device Inc.

PFC

SIHB16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHB16N50C

PowerMOSFET

FEATURES •Lowfigure-of-meritRonxQg •100avalanchetested •Gatechargeimproved •trr/Qrrimproved •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技

SIHF16N50C

PowerMOSFET

FEATURES •Lowfigure-of-meritRonxQg •100avalanchetested •Gatechargeimproved •trr/Qrrimproved •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技

SIHF16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHF16N50C

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SIHFB16N50K

LowGateChargeQgResultsinSimpleDriveRequirement

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFB16N50K

PowerMOSFET

VishayVishay Siliconix

威世科技

SIHP16N50C

GateChargeImprovedComplianttoRoHSDirective2002/95/EC

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技

SIHP16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHP16N50C

PowerMOSFET

FEATURES •Lowfigure-of-meritRonxQg •100avalanchetested •Gatechargeimproved •trr/Qrrimproved •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    SIHG16N50C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
VISHAY
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VISHAY/威世
21+
TO247
50000
终端可免费提供样品,欢迎咨询
询价
V
23+
TO-247
10000
公司只做原装正品
询价
VISHAY/威世
23+
TO247
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
21+
TO247
10000
原装现货假一罚十
询价
VISHAY/威世
2022+
TO-247
50000
原厂代理 终端免费提供样品
询价
IR
21+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
询价
ir
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
isc
2024
TO-247
1000
国产品牌isc,可替代原装
询价
VISHAY/威世
23+
NA/
11936
原厂直销,现货供应,账期支持!
询价
更多SIHG16N50C供应商 更新时间2024-5-31 13:34:00