Gate Charge Improved Compliant to RoHS Directive 2002/95/EC

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

文件：155.39 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low figure-of-merit Ron x Qg • 100 avalanche tested • Gate charge improved • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or pa

文件：271.29 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：328.73 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Low figure-of-merit Ron x Qg • 100 avalanche tested • Gate charge improved • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or pa

文件：271.29 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：271.29 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Low figure-of-merit Ron x Qg\n100 % avalanche tested\nGate charge improved;

Vishay

威世

Power MOSFET

·Low Figure-of-Merit Ron x Qg\n·100 % Avalanche Tested\n·Gate Charge Improved;

Vishay

威世