首页 >SIHP16N50C>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHP16N50C | Power MOSFET FEATURES •Lowfigure-of-meritRonxQg •100avalanchetested •Gatechargeimproved •trr/Qrrimproved •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa | VishayVishay Siliconix 威世科技 | Vishay | |
SIHP16N50C | Gate Charge Improved Compliant to RoHS Directive 2002/95/EC FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC | VishayVishay Siliconix 威世科技 | Vishay | |
SIHP16N50C | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
Power MOSFET FEATURES •Lowfigure-of-meritRonxQg •100avalanchetested •Gatechargeimproved •trr/Qrrimproved •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
16Amps,500VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC16N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
16A500VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
16A竊?00VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500V,16AN-ChannelMOSFET GeneralDescription TheAOT16N50&AOTF16N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
500V,16AN-ChannelMOSFET GeneralDescription TheAOT16N50&AOTF16N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-CHANNELMOSFETinaTO-220FLPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
OptimizedSwitchforDiscontinuousCurrentModePowerFactorCorrection | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
SIHP16N50C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Gate Charge Improved Compliant to RoHS Directive 2002/95/EC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
22+ |
TO-220 |
256 |
长源创新-只做原装---假一赔十 |
询价 | ||
AD |
22+23+ |
TO |
34633 |
绝对原装正品全新进口深圳现货 |
询价 | ||
vishay原装 |
19+ |
TO-220 |
9860 |
一级代理 |
询价 | ||
23+ |
N/A |
90150 |
正品授权货源可靠 |
询价 | |||
Vishay |
2020+ |
TO-220F |
51560 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
AD |
2021++ |
TO |
5850 |
全新原装现货 |
询价 | ||
V |
23+ |
TO-220AB |
10000 |
公司只做原装正品 |
询价 | ||
vishay |
21+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 |
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