Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

文件：588.22 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Fast S-IGBT in NPT-technology

Fast S-IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distributio

文件：275.85 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G20N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

Infineon

英飞凌

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.6V@IC= 12A · High Input Impedance · 12A, 600V, TC=100℃ APPLICATIONS · General Inverters · PFC

文件：348.03 Kbytes 页数：3 Pages

ISC

无锡固电

Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：531.47 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed

文件：587.03 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：416.83 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Sensirion Gas Platform

 Multi-pixel gas sensor for indoor air quality applications  Outstanding long-term stability  I2C interface with TVOC and CO2eq output signals  Very small 6-pin DFN package: 2.45 x 2.45 x 0.9 mm3  Low power consumption: 48 mA at 1.8V  Tape and reel packaged, reflow solderable

文件：1.0834 Mbytes 页数：15 Pages

Sensirion

盛思锐

丝印：G30N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：389.58 Kbytes 页数：12 Pages

Infineon

英飞凌