Fast S-IGBT in NPT-technology

Fast S-IGBT in NPT-technology • 40 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:    - Motor controls    - Inverter    - SMPS • NPT-Technology offers:    - very tight parameter distribution    - high ruggedness, temperature stable behavio

文件：386.07 Kbytes 页数：12 Pages

Infineon

英飞凌

IGBT

DESCRIPTION · Fast switching · Low Switching Losses APPLICATIONS · Motor controls · Inverter · SMPS

文件：315.37 Kbytes 页数：2 Pages

ISC

无锡固电

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：385.58 Kbytes 页数：12 Pages

Infineon

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：391 Kbytes 页数：12 Pages

Infineon

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：396.84 Kbytes 页数：12 Pages

Infineon

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swi

文件：386.64 Kbytes 页数：11 Pages

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

文件：401.72 Kbytes 页数：12 Pages

Infineon

英飞凌

Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC= 10A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC

文件：333.67 Kbytes 页数：3 Pages

ISC

无锡固电

Short Circuit Rated IGBT

General Description Fairchild’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, Uninterrupted Power Supplies (UPS) and general inverters w

文件：597.33 Kbytes 页数：8 Pages

Fairchild

仙童半导体