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SGR20N40L

General Description

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGR20N40L

High input impedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGR20N40LTF

包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 400V 45W DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SGR20N40LTM

包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 400V 45W DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

20N40

400V,23AN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托罗拉

20N40H

20A竊?00VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

20N40K-MT

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

AOTF20N40

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF20N40

400V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

FDH20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA20N40

400VN-ChannelMOSFET

Features •19.5A,400V,RDS(on)=0.22Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical45pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托罗拉

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •CommonAnodeConfiguration •LeadFreeByDesign/RoHSCompliant(Note3) •GreenDevice(Note4)

DIODESDiodes Incorporated

达尔科技

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODESDiodes Incorporated

达尔科技

详细参数

  • 型号:

    SGR20N40L

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    General Description

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2024+实力库存
2000
只做原厂渠道 可追溯货源
询价
FAIRCHILD
360000
原厂原装
1305
询价
04+
SOT-252
800
询价
FAIRCHILD
2017+
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRC
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
85900
正品授权货源可靠
询价
FAIRCHIL
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
JD/晶导
23+
SMAF
69820
终端可以免费供样,支持BOM配单!
询价
FAIRCHILD
08+
2000
普通
询价
更多SGR20N40L供应商 更新时间2024-5-21 16:36:00