Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：531.47 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.6V@IC= 12A · High Input Impedance · 12A, 600V, TC=100℃ APPLICATIONS · General Inverters · PFC

文件：348.03 Kbytes 页数：3 Pages

ISC

无锡固电

Ultra-Fast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed

文件：587.03 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：416.83 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

IGBT，600V，PT

飞兆半导体的 UF 系列 IGBT 提供低导通和开关损耗。UF系列设计用于需要高速开关特性的一般逆变器和PFC等应用。 •高速开关\n•低饱和电压：V CE(sat) = 2.1 V @ I C = 12A\n•高输入阻抗;

ONSEMI

安森美半导体

600V，PT IGBT

安森美半导体的 UD 系列绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗。UFD 系列适用于电机控制和通用逆变器等高速开关为必需特性的应用。 •高速开关\n•低饱和电压： VCE(sat)=2.1 V @ I C=12 A\n•高输入阻抗\n•CO-PAK、IGBT 及 FRD： rr=42 ns（典型值）;

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A 100W TO220

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 23A TO220-3

ONSEMI

安森美半导体