首页>SCTHS300N75G3AG>规格书详情
SCTHS300N75G3AG中文资料Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package数据手册ST规格书
SCTHS300N75G3AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2518+ |
SMD |
9852 |
只做原装正品现货或订货假一赔十! |
询价 | ||
smal |
24+ |
SMD |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST |
2511 |
QFP |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
QFP |
3200 |
原装长期供货! |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
25+ |
QFP |
16900 |
原装，请咨询 |
询价 | ||
ST/意法 |
23+ |
PowerFLAT8x8HV |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST |
23+ |
QFP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
询价 |
