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SCTHS250N65G2G数据手册ST中文资料规格书
SCTHS250N65G2G规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
PowerVDFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
24+ |
NA/ |
1661 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法 |
21+ |
SMD |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
ST |
两年内 |
NA |
30 |
实单价格可谈 |
询价 | ||
ST(意法半导体) |
20+ |
PowerVDFN-8 |
3000 |
询价 | |||
ST |
2018+ |
SMD |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
ST/意法 |
23+ |
PowerFLAT8x8HV |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST |
23+ |
QFP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST |
QFP |
3200 |
原装长期供货! |
询价 |
