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SCTHS250N65G2G中文资料Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package数据手册ST规格书
SCTHS250N65G2G规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
特性 Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
PowerVDFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
24+ |
NA/ |
1661 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST(意法半导体) |
20+ |
PowerVDFN-8 |
3000 |
询价 | |||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法 |
2518+ |
SMD |
9852 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST |
23+ |
QFP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
QFP |
3200 |
原装长期供货! |
询价 | |||
Honeywell |
Sensor |
145 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST/意法 |
25+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
两年内 |
NA |
30 |
实单价格可谈 |
询价 |
